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| SMD Type Medium Power Transistor FMMT489 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 Very low equivalent on-resistance 1 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 1.3-0.1 Features 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Peak collector current Collector current Base current Power dissipation Operating and storage temperature range Symbol VCBO VCEO VEBO ICM IC IB Ptot Tj,Tstg Rating 50 30 5 4 1 200 500 -55 to +150 Unit V V V A A mA mW Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage * Emitter-base breakdown voltage Collector cutoff current Emitter cut-off current Collector-emitter saturation voltage * Base-emitter saturation voltage * Base-emitter voltage * Symbol V(BR)CBO IC=100iA V(BR)CEO IC=10mA V(BR)EBO IE=100iA ICBO IEBO VCB=30V VEB=4V 0.3 Testconditons Min 50 30 5 100 100 Typ Max Unit V V V nA nA V V 1.0 100 100 60 20 150 10 MHz pF 300 V VCE(sat) IC=1A,IB=100mA VBE(sat) IC=1A,IB=100mA VBE(ON) IC=1A,VCE=2V IC=1mA,VCE=2V Static Forward Current Transfer Ratio* hFE IC=1A,VCE=2V IC=2A,VCE=2V IC=4A,VCE=2V Current-gain-bandwidth product Output capacitance * Pulse test: tp 300 is; d 0.02. fT Cobo IC=50mA,VCE=10V,f=100MHz VCB=10V,f=1MHz Marking Marking 489 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 |
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